Installation type | Surface mount |
packing | TR,bulk |
series | - |
Part status | stop production |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | 8-PowerTDFN |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 1.1W |
FET Type | 2 N Channel(two)Asymmetric type |
Drain source voltage (Vdss) | 30V |
Current at 25 ° C - continuous drain (Id) | 11.7A,14.2A |
On resistance (maximum) for different Ids and Vgs | 5.4 mΩ @ 10A,10V |
Vgs (th) (maximum) for different Ids | 2.2V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 22.2nC @ 10V |
Input capacitance at different Vds (Ciss) (maximum) | 1252pF @ 15V |
FET function | standard |